UT3006

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-636.C



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

55

A

Continuous

39

A

Drain Current

Pulsed (Note 2)

160

A

TO-252

41

W

DFN-8(5×6)

21

Junction Temperature

+175

°C

Storage Temperature

-55~+175

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse test.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

TO-252

110

°C/W

Junction to Ambient

DFN-8(5×6)

46

°C/W

TO-252

3

°C/W

Junction to Case

DFN-8(5×6)

6

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

10

µA

Forward

+100 nA

Gate- Source Leakage Current

Reverse

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

1

3

V

9

mΩ

Static Drain-Source On-State Resistance

(Note)

16

mΩ

Forward Transconductance

42

S

DYNAMIC PARAMETERS

Input Capacitance

700 1120 pF

Output Capacitance

215

pF

Reverse Transfer Capacitance

155

pF

SWITCHING PARAMETERS

Total Gate Charge (Note)

13

21

nC

Gate to Source Charge

2.5

nC

Gate to Drain Charge

9.5

nC

Gate Resistance

f=1.0MHz

1.9

Ω

Turn-ON Delay Time (Note)

8

ns

Rise Time

85

ns

Turn-OFF Delay Time

20.5

ns

Fall-Time

10

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage (Note)

1.2

V

Body Diode Reverse Recovery Time (Note)

23

ns

Body Diode Reverse Recovery Charge

dI/dt=100A/µs

14

µC

Note: Pulse test.