UT108N03

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-197.I



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Drain Current

108

A

Pulsed Drain Current (Note 2)

432

A

Avalanche Energy (Note 3)

580

mJ

Power Dissipation

TO-220

107

W

TO-251/TO-252

TO-252D

60

Junction Temperature

+150

°C

Strong Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220

62.5

°C /W

TO-251/TO-252

TO-252D

100

°C /W

Junction to Case

TO-220

1.4

°C /W

TO-251/TO-252

TO-252D

2.5

°C/W