UTT18P06

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-713. D



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-60

V

Gate-Source Voltage

±20

V

Drain Current

-18.3

A

Pulsed

-73.2

A

Single Pulsed Avalanche Current (L=0.1mH)

-18.3

A

Single Pulsed Avalanche Energy (L=0.1mH) (Note 1)

24.2

mJ

Power Dissipation (Note 2)

TO-220F

2

W

TO-252

1.13

W

TO-220F

39

W

TO-252

41

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Steady state)

TO-220F

62.5

°C/W

TO-252

110

°C/W

Junction to Case

TO-220F

3.19

°C/W

TO-252

3.05

°C/W

Notes: 1. Duty cycle≤1 %

2. See SOA curve for voltage derating