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4N60L-TN3-R 데이터시트(PDF) 1 Page - Unisonic Technologies |
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4N60L-TN3-R 데이터시트(HTML) 1 Page - Unisonic Technologies |
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1 / 7 page ![]() UNISONIC TECHNOLOGIES CO., LTD 4N60-C Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-A42.C 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 2.5Ω @VGS = 10 V * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness SYMBOL TO-251 1 TO-220F2 TO-220F 1 1 1 TO-220F1 TO-252 1 ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 4N60L-TF3-T 4N60G-TF3-T TO-220F G D S Tube 4N60L-TF1-T 4N60G-TF1-T TO-220F1 G D S Tube 4N60L-TF2-T 4N60G-TF2-T TO-220F2 G D S Tube 4N60L-TM3-T 4N60G-TM3-T TO-251 G D S Tube 4N60L-TN3-R 4N60G-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source |
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