2N50K-TA

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R205-031.A



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

±30

V

Drain Current

2 (Note 3)

A

Pulsed (Note 2)

8 (Note 3)

A

Avalanche Current (Note 2)

2

A

Avalanche Energy

Single Pulsed

82

mJ

Repetitive (Note 4)

3.3

mJ

TO-220

52

W

TO-220F/TO-220F1

TO-220F3

23

TO-220F2

23.2

TO-251/TO-251S

TO-252/TO-252D

50

Derate above 25°C

TO-220

0.43

W/°C

TO-220F/TO-220F1

TO-220F3

0.18

TO-220F2

0.185

TO-251/TO-251S

TO-252/TO-252D

0.4

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. Drain current limited by maximum junction temperature

4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/TO-220F

TO-220F1/TO-220F2

TO-220F3

62.5

°C/W

TO-251/TO-251S

TO-252/TO-252D

110

Junction to Case

TO-220

2.36

°C/W

TO-220F/TO-220F1

TO-220F3

5.5

TO-220F2

5.4

TO-251/TO-251S

TO-252/TO-252D

2.5