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50N06L-TN3-R 데이터시트(PDF) 1 Page - Unisonic Technologies |
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50N06L-TN3-R 데이터시트(HTML) 1 Page - Unisonic Technologies |
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1 / 8 page ![]() UNISONIC TECHNOLOGIES CO., LTD 50N06-F Preliminary Power MOSFET www.unisonic.com.tw 1 of 8 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-A83.a 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06-F is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances. FEATURES * RDS(ON) < 23mΩ@VGS = 10 V * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability SYMBOL 1.Gate 3.Source 2.Drain ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 50N06L-TN3-R 50N06G-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING INFORMATION PACKAGE MARKING TO-252 |
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