4N65K-TA

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R205-039.b



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

650

V

Gate-Source Voltage

±30

V

Continuous

4.0

A

Drain Current

Pulsed (Note2)

16

A

Avalanche Energy

Single Pulsed (Note3)

150

mJ

Peak Diode Recovery dv/dt (Note4)

dv/dt

4.5

V/ns

TO-220/TO-262

106

W

TO-220F

34

W

TO-220F1/TO-220F2

TO-220F3

36

W

TO-251/TO-251S

TO-251S2/ TO-251S4

TO-252/TO-252D

50

W

Power Dissipation

TO-126

45

W

Junction Temperature

+150

°С

Operating Temperature

-55 ~ +150

°С

Storage Temperature

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220/TO-220F

TO-220F1/TO-220F2

TO-220F3/TO-262

62.5

°C/W

TO-251/TO-251S

TO-251S2/ TO-251S4

TO-252/TO-252D

110

°C/W

Junction to Ambient

TO-126

89

°C/W

TO-220

1.18

°C/W

TO-220F/TO-220F1

3.47

°C/W

TO-220F3

3.67

°C/W

TO-220F2

3.57

°C/W

TO-251/TO-251S

TO-251S2/ TO-251S4

TO-252/TO-252D

2.5

°C/W

TO-262

1.18

°C/W

Junction to Case

TO-126

2.7

°C/W