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6N70KL-TN3-R 데이터시트(PDF) 4 Page - Unisonic Technologies

부품명 6N70KL-TN3-R
상세설명  N-CHANNEL POWER MOSFET
PDF  7 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

6N70KL-TN3-R 데이터시트(HTML) 4 Page - Unisonic Technologies

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6N70K-MTQ
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 7
www.unisonic.com.tw
QW-R205-051.B
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
700
V
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250µA
0.79
V/°C
VDS=700V, VGS=0V
1
µA
Drain-Source Leakage Current
IDSS
VDS=560V, TC=125°C
250
µA
Forward
VGS=+30V, VDS=0V
+100
nA
Gate-Source Leakage Current
Reverse
IGSS
VGS=-30V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=3A (Note 1)
2.0
2.4
Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
480
pF
Output Capacitance
COSS
65
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=25V,
f=1.0MHz (Note 1, 2)
7.5
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
70
ns
Rise Time
tR
61
ns
Turn-OFF Delay Time
tD(OFF)
140
ns
Fall-Time
tF
VDD=30V, ID=0.5A, RG=25Ω
VGS=10V
41
ns
Total Gate Charge
QG
45
nC
Gate to Source Charge
QGS
7
nC
Gate to Drain Charge
QGD
VGS=10V, VDS=50V,
ID=1.3A, IG=100µA
(Note 1, 2)
7
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
6
A
Maximum Body-Diode Pulsed Current
(Note 3)
ISM
Integral reverse pn-diode in
the MOSFET
24
A
Drain-Source Diode Forward Voltage
(Note 2)
VSD
IS=6A, VGS=0V, TJ = 25°C
1.4
V
Notes: 1. Pulse Test: Pulse width ≤ 250µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature



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