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QS8M11L-S08-R 데이터시트(PDF) 3 Page - Unisonic Technologies

부품명 QS8M11L-S08-R
상세설명  DUAL ENHANCEMENT MODE
PDF  6 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

QS8M11L-S08-R 데이터시트(HTML) 3 Page - Unisonic Technologies

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QS8M11
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-B29.a
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
N-Channel
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
TC=25°C
ID
3.5
A
Pulsed Drain Current
TC=25°C
IDM
12
A
Power Dissipation
PD
2
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
P-Channel
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
TC=25°C
ID
-3.0
A
Pulsed Drain Current
TC=25°C
IDM
-12
A
Power Dissipation
PD
2
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. PW ≤ 10μs, Duty cycle ≤ 1%, Mounted on a ceramic board.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
N-CHANNEL
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=1mA, VGS=0V
30
V
Drain-Source Leakage Current
IDSS
VDS=30V, VGS=0V
1
µA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
±10
uA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=10V, ID=1mA
1.0
2.5
V
Drain-Source On-State Resistance (Note2)
RDS(ON)
VGS=10V, ID=3.5A
35
50
mΩ
VGS=4.5V, ID=3.5A
45
65
mΩ
VGS=4.0V, ID=3.5A
50
70
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V, VDS=10V,
f=1.0MHz
180
pF
Output Capacitance
COSS
70
pF
Reverse Transfer Capacitance
CRSS
35
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
tD(ON)
VDD≈15V, VGS=10V,
ID=1.7A, RG=10Ω,
RL=8.8Ω
10
ns
Turn-ON Rise Time
tR
25
ns
Turn-OFF Delay Time
tD(OFF)
25
ns
Turn-OFF Fall Time
tF
7
ns
Total Gate Charge (Note2)
QG
VGS=5V, VDD≈15V,
ID=3.5A
3.5
nC
Gate-Source Charge
QGS
1
nC
Gate-Drain Charge
QGD
1
nC
SOURCE TO DRAIN DIODE SPECIFICATIONS
Source to Drain Diode Voltage (Note 2)
VSD
IS=3.5A, VGS=0V
1.2
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
1.0
A
Maximum Pulsed Drain-Source Diode Forward
Current
ISM
12
A



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