UT8067

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R210-005.b



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous (Note 1)

9

A

Drain Current

Pulsed (Note 1)

36

A

Avalanche Current

9

A

Single Pulsed Avalanche Energy (Note 2)

21

mJ

Power Dissipation (t=10s)

1.0

W

Junction Temperature

150

°C

Storage Temperature Range

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (t=10s)

125

°C/W

Note: Surface Mounted on 25.4 mm×25.4 mm×0.8mm FR4 Board.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

30

V

Drain-Source Breakdown Voltage

15

V

Drain-Source Leakage Current

10

µA

Forward

+0.1

µA

Gate-Source Leakage Current

Reverse

-0.1

µA

ON CHARACTERISTICS

Gate Threshold Voltage

1.3

2.3

V

26

33

Static Drain-Source On-State Resistance

20

25

mΩ

DYNAMIC PARAMETERS

Input Capacitance

690

pF

Output Capacitance

120

pF

Reverse Transfer Capacitance

28

pF

SWITCHING PARAMETERS

9.5

nC

Total Gate Charge

4.7

nC

Gate to Source Charge

2.2

nC

Gate to Drain Charge

0.9

nC

Gate Resistance

3.4

5.1

Ω

Turn-ON Delay Time

6.7

ns

Rise Time

2.1

ns

Turn-OFF Delay Time

15

ns

Fall-Time

2.1

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

-1.2

V

Continuous Drain-Source Current

36

A

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature