MBR2100G-CA2-R datasheet(2/3 Pages) UTC

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MBR2100

Preliminary

DIODE

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R202-051.a



ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Ratings at 25°C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

PARAMETER

SYMBOL

RATINGS

UNIT

DC Blocking Voltage

VRM

100

Working Peak Reverse Voltage

VRWM

100

Repetitive Peak Reverse Voltage

VRRM

100

Average Rectified Output Current

2.0

Non-Repetitive Peak Forward Surge Current: 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

IFSM

Operating Junction Temperature

-65~+150

°C

Storage Temperature

TSTG

-65~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

625

°C/W



ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

IF=2.0A TJ=25°C

0.79

Forward Voltage Drop (Note 3)

IF=2.0A, TJ=125°C

0.69

TJ=25°C, VR=100V

100

μA

Peak Reverse Current at Rated DC

Blocking Voltage

TJ=125°C, VR=100V

Notes: 1. Measured at ambient temperature at a distance of 9.5mm from the case.

2. Minimum Pad Area.

3. Pulse test: 300μs pulse width, duty cycle 2%.

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