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MBR3200G-SMC-R 데이터시트(PDF) 2 Page - Unisonic Technologies |
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MBR3200G-SMC-R 데이터시트(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() MBR3200 Preliminary DIODE UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R202-020.b ABSOLUTE MAXIMUM RATINGS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage VRM 200 V RMS Reverse Voltage VR(RMS) 140 V Maximum Recurrent Peak Reverse Voltage VRRM 200 V Average Rectified Output Current IO 3.0 A Non-Repetitive Peak Forward Surge Current: 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 80 A Operating Junction Temperature TJ -65~+150 °C Storage Temperature TSTG -65~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA (Note 1) PARAMETER SYMBOL RATINGS UNIT SMC 90 °C/W Junction to Ambient DO-201AD θJA 50 °C/W ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT IF=3.0A TJ=25°C 0.9 V Forward Voltage Drop (Note 2) VF IF=3.0A, TJ=100°C 0.7 V TJ=25°C 50 μA Peak Reverse Current at Rated DC Blocking Voltage IR TJ=100°C 10 mA Notes: 1. Minimum Pad Area 2. Pulse test: 300μs pulse width, 1% duty cycle |
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