SBL3045C

Preliminary

DIODE

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R601-075.c



PARAMETER

SYMBOL

RATINGS

UNIT

Recurrent Peak Reverse Voltage

45

V

RMS Voltage

45

V

RMS Reverse Voltage

32

V

DC Blocking Voltage

45

V

Average Forward Rectified Current

Per Leg

15

A

Per Package

30

Peak Forward Surge Current 8.3ms Single Half

Sine-Wave Superimposed on Rated Load Per Diode

180

A

Critical Rate of Rise of Reverse Voltage

dV/dt

10000

V/µs

Operating Junction Temperature

150

°C

Storage Temperature

-65~+150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2.

J

dT

dPtot

<

)

a

j

(

Rth

1

－

thermal runaway condition for a diode on its own heatsink



THERMAL RESISTANCES

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

TO-220/TO-263

1.60

°C/W

TO-220F1

3.31

°C/W

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PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Reverse Breakdown Voltage (Note 3)

45

V

Forward Voltage Drop

0.56 0.62

V

0.57

V

Leakage Current (Note 3)

1

mA

75

mA

Notes: 1. Pulse Test: 380μs pulse width, 2% duty cycle.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3. Short duration pulse test used to minimize self-heating effect.

4. Thermal resistance junction to case mounted on heatsink.

5. Mounted on an FR4 PCB, single-sided copper, with 100 cm