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SIS782DN 데이터시트(PDF) 7 Page - Vishay Telefunken |
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SIS782DN 데이터시트(HTML) 7 Page - Vishay Telefunken |
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7 / 14 page ![]() Document Number: 67954 S11-1177-Rev. A, 13-Jun-11 www.vishay.com 7 Vishay Siliconix SiS782DN This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67954. Normalized Thermal Transient Impedance, Junction-to-Ambient 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse t1 t2 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 81 °C/W 3. TJM -TA =PDMZthJA(t) t1 t2 4. Surface Mounted Normalized Thermal Transient Impedance, Junction-to-Case 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse |
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