FCDN608−UBM

http://onsemi.com

2

Table 1. PIN DESCRIPTIONS

FCDN608−UBM (Schematic and Top View)

Designation

Schematic

Top View

Metal Composition

1

Signal Node

Wirebond Pad

Al

2

Signal Node

DAP

Cu

3

Reference Node

Test Point

−

4

Reference Node

N/A

Bare Silicon

Table 2. ORDERING INFORMATION

Ordering Part Number

DAP (Die Attach Pad)

Backside Metal

BG Thickness

Shipping Method

FCDN608−UBM

Cu (Copper)

Bare Silicon

10 mils

Wafer Form

SPECIFICATIONS

Table 3. ABSOLUTE MAXIMUM RATINGS

Parameter

Rating

Units

Operating Junction Temperature Range

−40 to +150

C

Storage Junction Temperature Range

−65 to +150

C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

Table 4. STANDARD OPERATING CONDITIONS

Parameter

Rating

Units

Operating Junction Temperature Range

−40 to +150

C

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Leakage Current

V = 5 V, 25C

V = −10 V, 25C

V = 5 V, 150C

+0.35

−0.35

4.0

mA

mA

mA

Clamp Voltage on Signal Node

Positive Polarity

Negative Polarity

at 10 mA

at −10 mA

+5

−14

+7

−11.5

+9

−10

V

ESD Protection − Withstand Voltage:

Human Body Model

(MIL−STD−883, Method 3015)

15

kV

Clamping Voltage on Signal Node for Transients

Positive Polarity

Negative Polarity

Positive Transients

Negative Transients

+7

−12

V

Dynamic Resistance

Positive Transients

Negative Transients

0.2

0.4

W

Input Capacitance

At 1 MHz, 30 mV osc. Level,

0 VDC Bias (Note 2)

At 1 MHz, 30 mV osc. Level,

3 VDC Bias

175

120

pF

1. Operating characteristics are over standard operating conditions unless otherwise specified.