NVMFS5113PL datasheet(1/6 Pages) ONSEMI

부품명	NVMFS5113PL

상세설명	Power MOSFET

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November, 2015 − Rev. 3

1

Publication Order Number:

NVMFS5113PL/D

NVMFS5113PL

Power MOSFET

−60 V, 14 m

W, −64 A, Single P−Channel

Features

• Low RDS(on) to Minimize Conduction Losses

• High Current Capability

• Avalanche Energy Specified

• NVMFS5113PLWF − Wettable Flanks Product

• NVM Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

−60

V

Gate−to−Source Voltage

VGS

"20

V

Continuous Drain Cur-

rent RqJC (Notes 1, 2, 3)

Steady

State

TC = 25°C

ID

−64

A

TC = 100°C

−45

Power Dissipation RqJC

(Notes 1, 2)

TC = 25°C

PD

150

W

TC = 100°C

75

Continuous Drain Cur-

rent RqJA (Notes 1, 2, 3)

Steady

State

TA = 25°C

ID

−10

A

TA = 100°C

−7

Power Dissipation RqJA

(Notes 1, 2)

TA = 25°C

PD

3.8

W

TA = 100°C

1.9

Pulsed Drain Current

TA = 25°C, tp = 10 ms

IDM

−415

A

Operating Junction and Storage Temperature

TJ, Tstg

− 55 to

175

°C

Source Current (Body Diode)

IS

−150

A

Single Pulse Drain−to−Source Avalanche

Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,

IL(pk) = 46 A, L = 0.3 mH, RG = 25 W)

EAS

315

mJ

Lead Temperature for Soldering Purposes

(1/8

″ from case for 10 s)

TL

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State (Drain)

(Note 2)

RqJC

1.0

°C/W

Junction−to−Ambient − Steady State (Note 2)

RqJA

39

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.

3. Continuous DC current rating. Maximum current for pulses as long as

1 second is higher but is dependent on pulse duration and duty cycle.

−60 V

14 m

W @ −10 V

RDS(on)

−64 A

ID

V(BR)DSS

22 m

W @ −4.5 V

www.onsemi.com

P−Channel

D (5, 6)

S (1, 2, 3)

G (4)

DFN5

CASE 488AA

STYLE 1

MARKING

DIAGRAM

A

= Assembly Location

Y

= Year

W

= Work Week

ZZ

= Lot Traceability

XXXXXX

AYWZZ

S

G

D

See detailed ordering, marking and shipping information on

page 5 of this data sheet.

ORDERING INFORMATION

1

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