KAI-2001 datasheet(4/36 Pages) ONSEMI

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KAI−2001

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Pixel

Figure 3. Pixel Architecture

Top View

Direction

Charge

Transfer

True Two Phase Burried Channel VCCD

Lightshield over VCCD not shown

Photodiode

Transfer

Gate

Direction of

Charge

Transfer

n−

p Well (GND)

Cross Section Down Through VCCD

n Substrate

Light Shield

Cross Section Through

Photodiode and VCCD Phase 1

Photodiode

Light Shield

n Substrate

Cross Section Through Photodiode

and VCCD Phase 2 at Transfer Gate

Transfer

Gate

Cross Section Showing Lenslet

Lenslet

VCCD

Light Shield

Photodiode

Red Color Filter

NOTE: Drawings not scale.

7.4

n Substrate

An electronic representation of an image is formed when

incident photons falling on the sensor plane create

electron-hole

pairs

within

the

individual

silicon

photodiodes. These photoelectrons are collected locally by

the formation of potential wells at each photosite. Below

photodiode saturation, the number of photoelectrons

collected at each pixel is linearly dependent upon light level

and exposure time and non-linearly dependent on

wavelength. When the photodiodes charge capacity is

reached, excess electrons are discharged into the substrate to

prevent blooming.

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