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KAI-08050 데이터시트(PDF) 3 Page - ON Semiconductor

부품명 KAI-08050
상세설명  Interline CCD Image Sensor
PDF  31 Pages
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

KAI-08050 데이터시트(HTML) 3 Page - ON Semiconductor

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KAI−08050
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DEVICE DESCRIPTION
Architecture
Figure 2. Block Diagram
HLOD
12 Dark
12
V1B
12 Buffer
12
12
22
1 Dummy
1 Dummy
3296H x 2472V
5.5 mm x 5.5 mm Pixels
1648
1648
1648
1648
(Last VCCD Phase = V1 → H1S)
V2B
V3B
V4B
V1T
V2T
V3T
V4T
RDa
Ra
VDDa
VOUTa
GND
RDc
Rc
VDDc
VOUTc
GND
RDd
Rd
VDDd
VOUTd
GND
RDb
Rb
VDDb
VOUTb
GND
V1B
V2B
V3B
V4B
V1T
V2T
V3T
V4T
H2SLa
OGa
H2SLc
OGc
H2SLd
OGd
H2SLb
OGb
ESD
ESD
8 22 10 1
12
8
22
10
1
12
8
22
10
1
12
8 22
12
22 12
DevID
HLOD
10 1
Dark Reference Pixels
There are 12 dark reference rows at the top and 12 dark
rows at the bottom of the image sensor. The dark rows are not
entirely dark and so should not be used for a dark reference
level. Use the 22 dark columns on the left or right side of the
image sensor as a dark reference.
Under normal circumstances use only the center 20
columns of the 22 column dark reference due to potential
light leakage.
Dummy Pixels
Within each horizontal shift register there are 11 leading
additional shift phases. These pixels are designated as
dummy pixels and should not be used to determine a dark
reference level.
In addition, there is one dummy row of pixels at the top
and bottom of the image.
Active Buffer Pixels
12 unshielded pixels adjacent to any leading or trailing
dark reference regions are classified as active buffer pixels.
These pixels are light sensitive but are not tested for defects
and non−uniformities.
Image Acquisitio
n
An electronic representation of an image is formed when
incident photons falling on the sensor plane create
electron−hole pairs within the individual silicon
photodiodes. These photoelectrons are collected locally by
the formation of potential wells at each photosite. Below
photodiode saturation, the number of photoelectrons
collected at each pixel is linearly dependent upon light level
and exposure time and non−linearly dependent on
wavelength. When the photodiodes charge capacity is
reached, excess electrons are discharged into the substrate to
prevent blooming.



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