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SSF4953 데이터시트(PDF) 2 Page - GOOD-ARK Electronics |
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SSF4953 데이터시트(HTML) 2 Page - GOOD-ARK Electronics |
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2 / 6 page ![]() www.goodark.com Page 2 of 6 Rev.2.0 SSF4953 30V Dual P-Channel MOSFET ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS, ID =-250μA -1 -3 V VGS=-10V, ID =-5.3A 46 53 Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID =-4A 70 85 mΩ Forward Transconductance gFS VDS=-5V, ID =-5.3A 8 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss 525 PF Output Capacitance Coss 135 PF Reverse Transfer Capacitance Crss VDS=-15V,VGS=0V, F=1.0MHz 70 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time td(on) 7 14 nS Turn-on Rise Time tr 13 24 nS Turn-Off Delay Time td(off) 14 25 nS Turn-Off Fall Time tf VDD=-15V, ID =-1A VGS=-10V,RGEN=6Ω 9 17 nS Total Gate Charge Qg 6 9 nC Gate-Source Charge Qgs 2.2 nC Gate-Drain Charge Qgd VDS=-15V, ID=-4.5A,VGS=-10V 2 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-2.1A -0.8 -1.2 V Diode Forward Current (Note 2) IS -2.1 A NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. |
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