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MSARS200S10LR 데이터시트(PDF) 1 Page - Microsemi Corporation |
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MSARS200S10LR 데이터시트(HTML) 1 Page - Microsemi Corporation |
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1 / 2 page ![]() MSARS200S10L MSARS200S10LR 100 Volts 200 Amps Features • passivated mesa structure for very low leakage currents • Epitaxial structure minimizes forward voltage drop • Hermetically sealed, low profile ceramic surface mount power package • Low package inductance • Very low thermal resistance • Available as standard polarity (strap-to-anode, MSARS200S10L) and reverse polarity (strap-to-cathode: MSARS200S10RL) DESCRIPTION SYMBOL MAX. UNIT Peak Repetitive Reverse Voltage VRRM 100 Volts Working Peak Reverse Voltage VRWM 100 Volts DC Blocking Voltage VR 100 Volts Average Rectified Forward Current, Tc ≤125°C IF(ave) 200 Amps derating, forward current, Tc ≥ 125°C dIF/dT 4 Amps/ °C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave IFSM 750 Amps Junction Temperature Range Tj -55 to +200 °C Storage Temperature Range Tstg -55 to +200 °C Thermal Resistance, Junction to Case: MSARS200S10L MSARS200S10LR θ JC 0.20 0.35 °C/W Maximum Ratings @ 25 °C (unless otherwise specified) Mechanical Outline ThinKey™ 3 Datasheet# MSC1037A 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 HIGH CURRENT CAPABILITY & LOW VOLTAGE DROP STANDARD RECOVERY RECTIFIER |
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