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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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MXP1017 데이터시트(PDF) 1 Page - Microsemi Corporation |
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MXP1017 데이터시트(HTML) 1 Page - Microsemi Corporation |
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1 / 1 page  Opto Products 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 Data Sheet # MSC1329.PDF Updated:June 1999 MXP1017 Electrical Characteristics @ 25oC Features • Light Activated Photo SCR • Planar PNPN • High Voltage • Cathode and Gate pads are Aluminum Wire bondable • Anode is backside of die • Backside Metallization - Gold • Die Attach method; eutectic or epoxy Photo SCR SYMBOL CHARACTERISTIC TYP UNITS VDM Off-State Voltage 550 Volts VRM Reverse Voltage 550 Volts IDM Off-State Leakage Current 0.2 uAmps IRM Reverse Leakage 0.5 uAmps IGT Gate Trigger Current 1.3 uAmps IH Holding Current 40 uAmps tON Turn-On Time 5 useconds |
유사한 부품 번호 - MXP1017 |
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유사한 설명 - MXP1017 |
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