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ASM3P2811B 데이터시트(PDF) 4 Page - ON Semiconductor

부품명 ASM3P2811B
상세설명  Low Power EMI Reduction IC
PDF  9 Pages
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

ASM3P2811B 데이터시트(HTML) 4 Page - ON Semiconductor

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ASM3P2811A/B, ASM3P2812A/B, ASM3P2814A/B
http://onsemi.com
4
Table 6. DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Min
Typ
Max
Unit
VIL
Input low voltage
VSS−0.3
0.8
V
VIH
Input high voltage
2
VDD+0.3
V
IIL
Input low current
(Inputs D_C, SRS and FRS are pulled high internally)
−50
mA
IIH
Input high current
50
mA
IXOL
XOUT Output low current (VXOL @ 0.4 V, VDD = 3.3 V)
3
mA
IXOH
XOUT Output high current (VXOH @ 2.5 V, VDD = 3.3 V)
3
mA
VOL
Output low voltage (VDD = 3.3 V, IOL = 5 mA)
0.4
V
VOH
Output high voltage (VDD = 3.3 V, IOH = −5 mA)
2.5
V
ICC
Dynamic supply current (Unloaded Output)
8
18
mA
IDD
Static supply current, Standby mode (CLKIN pulled to GND)
4.5
mA
VDD
Operating voltage
3.0
3.3
3.6
V
tON
Power up time (first locked clock cycle after power up)
500
mS
ZOUT
Clock out impedance
76
W
Table 7. AC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Min
Typ
Max
Unit
fIN
Input frequency for ASM3P2811/12/13/14 A/B
10
40
MHz
fOUT
Output frequency for ASM3P2811A/B
10
40
MHz
Output frequency for ASM3P2812A/B
20
80
MHz
Output frequency for ASM3P2814A/B
40
160
MHz
tLH (Note 2)
Output rise time (measured at 0.8 V to 2.0 V)
0.5
0.9
1.2
nS
tHL (Note 2)
Output fall time (measured at 2.0 V to 0.8 V)
0.8
1.0
1.3
nS
tJC
Cycle−to−Cycle Jitter (Unloaded Output)
±250
pS
tD
Output duty cycle
45
50
55
%
2. tLH and tHL are measured into a capacitive load of 10 pF.



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