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ACE8205A 데이터시트(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE8205A 데이터시트(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 8 page ![]() ACE8205A Dual N-Channel Enhancement Mode Field Effect Transistor VER 1.1 1 Description The ACE8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. It is ESD protected. ACE8205A is electrically identical. - RoHS Compliant Features V DS (V) = 20V ID = 6 A RDS(ON)< 37mΩ (VGS = 2.5V) RDS(ON)< 27mΩ (VGS = 4.5V) High power and current handing capability Lead free product is acquired Surface mount package Applications Battery protection Load switch Power management Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V Drain Current-Continuous ID 6 A Drain Current-Pulsed (Note 1) IDM 25 A Maximum Power Dissipation P D 1.5 W Operating Junction and Storage Temperature Range T J,TSTG -55 To 150 ℃ Thermal Resistance, Junction-to-Ambient (Note 2) RθJA 83 ℃/W |
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