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ECH8309 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 ECH8309
상세설명  P-Channel Power MOSFET
PDF  7 Pages
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ECH8309 데이터시트(HTML) 2 Page - ON Semiconductor

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ECH8309
No. A1418-2/7
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--12
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--12V, VGS=0V
--10
μA
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=--6V, ID=--1mA
--0.4
--1.3
V
Forward Transfer Admittance
| yfs |
VDS=--6V, ID=--4.5A
9.6
16
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--4.5A, VGS=--4.5V
12
16
mΩ
RDS(on)2
ID=--2A, VGS=--2.5V
18
26
mΩ
RDS(on)3
ID=--1A, VGS=--1.8V
30
53
mΩ
Input Capacitance
Ciss
VDS=--6V, f=1MHz
1780
pF
Output Capacitance
Coss
540
pF
Reverse Transfer Capacitance
Crss
390
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
22
ns
Rise Time
tr
110
ns
Turn-OFF Delay Time
td(off)
157
ns
Fall Time
tf
123
ns
Total Gate Charge
Qg
VDS=--6V, VGS=--4.5V, ID=--9.5A
18
nC
Gate-to-Source Charge
Qgs
2.8
nC
Gate-to-Drain “Miller” Charge
Qgd
4.9
nC
Diode Forward Voltage
VSD
IS=--9.5A, VGS=0V
--0.8
--1.2
V
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
ECH8309-TL-H
ECH8
3,000pcs./reel
Pb Free and Halogen Free
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID= --4.5A
RL=1.3Ω
VDD= --6V
VOUT
VIN
0V
--4.5V
VIN
ECH8309



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