ECH8652 datasheet(2/7 Pages) ONSEMI

2 / 7 page

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=--1mA, VGS=0V

--12

Zero-Gate Voltage Drain Current

IDSS1VDS=--8V, VGS=0V

--1

μA

IDSS2VDS=--12V, VGS=0V

--10

μA

Gate-to-Source Leakage Current

IGSS

VGS=±8V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=--6V, ID=--1mA

--0.4

--1.4

Forward Transfer Admittance

| yfs |

VDS=--6V, ID=--3A

6.6

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=--3A, VGS=--4.5V

mΩ

RDS(on)2

ID=--1.5A, VGS=--2.5V

mΩ

RDS(on)3

ID=--0.5A, VGS=--1.8V

mΩ

Input Capacitance

Ciss

VDS=--6V, f=1MHz

1000

Output Capacitance

Coss

320

Reverse Transfer Capacitance

Crss

250

Turn-ON Delay Time

td(on)

See speciﬁed Test Circuit.

Rise Time

Turn-OFF Delay Time

td(off)

105

Fall Time

Total Gate Charge

VDS=--6V, VGS=--4.5V, ID=--6A

Gate-to-Source Charge

Qgs

1.5

Gate-to-Drain “Miller” Charge

Qgd

2.9

Diode Forward Voltage

VSD

IS=--6A, VGS=0V

--0.81

--1.2

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

ECH8652-TL-H

ECH8

3,000pcs./reel

Pb Free and Halogen Free

PW=10μs

D.C.≤1%

P.G

50Ω

ID= --3A

RL=2Ω

VDD= --6V

VOUT

ECH8652

VIN

--4.5V

VIN

ECH8652

No. A0935-2/7

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