60612 TKIM/42209PE MSIM TC-00001907 No. A1456-1/7

http://onsemi.com

Semiconductor Components Industries, LLC, 2013

July, 2013

ECH8671

P-Channel Power MOSFET

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Features

•

1.8V drive

•

Composite type, facilitating high-density mounting

•

Halogen free compliance

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

--12

V

Gate-to-Source Voltage

VGSS

±10

V

Drain Current (DC)

ID

--3.5

A

Drain Current (Pulse)

IDP

PW≤10μs, duty cycle≤1%

--30

A

Allowable Power Dissipation

PD

1.3

W

Total Power Dissipation

PT

1.5

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

This product is designed to “ESD immunity < 200V

*”, so please take care when handling.

* Machine Model

Package Dimensions

unit : mm (typ)

7011A-001

Product & Package Information

• Package

: ECH8

• JEITA, JEDEC

: -

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type : TL

Marking

Electrical Connection

Ordering number : ENA1456A

876

5

123

4

1 : Source1

2 : Gate1

3 : Source2

4 : Gate2

5 : Drain2

6 : Drain2

7 : Drain1

8 : Drain1

ECH8

1

4

85

0.15

0 to 0.02

0.65

2.9

0.3

Top View

Bottom View

TL

TS

LOT No.

ECH8671-TL-H