5LP01SP

No.6621-2/6

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Value

Unit

min

typ

max

Drain to Source Breakdown Voltage

V(BR)DSS

ID=-1mA, VGS=0V

-50

V

Zero-Gate Voltage Drain Current

IDSS

VDS=-50V, VGS=0V

10

μA

Gate to Source Leakage Current

IGSS

VGS=±8V, VDS=0V

±10

μA

Gate Threshold Voltage

VGS(th)

VDS=-10V, ID=-100μA

-0.4

-1.4

V

Forward Transconductance

gFS

VDS=-10V, ID=-40mA

70

100

mS

Static Drain to Source On-State Resistance

RDS(on)1

ID=-40mA, VGS=-4V

18

23

Ω

RDS(on)2

ID=-20mA, VGS=-2.5V

20

28

Ω

RDS(on)3

ID=-5mA, VGS=-1.5V

30

60

Ω

Input Capacitance

Ciss

VDS=-10V, f=1MHz

7.4

pF

Output Capacitance

Coss

4.2

pF

Reverse Transfer Capacitance

Crss

1.3

pF

Turn-ON Delay Time

td(on)

See specified Test Circuit.

20

ns

Rise Time

tr

35

ns

Turn-OFF Delay Time

td(off)

160

ns

Fall Time

tf

150

ns

Total Gate Charge

Qg

VDS=-10V, VGS=-10V, ID=-70mA

1.40

nC

Gate to Source Charge

Qgs

0.16

nC

Gate to Drain “Miller” Charge

Qgd

0.23

nC

Forward Diode Voltage

VSD

IS=-70mA, VGS=0V

0.85

1.2

V

Switching Time Test Circuit

PW=10μs

D.C.≤1%

0V

--4V

VIN

P.G

50Ω

G

D

ID= --40mA

RL=607Ω

VDD= --25V

VOUT

5LP01SP

S

VIN

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.