IRF830 datasheet(2/3 Pages) ONSEMI

2 / 3 page

IRF830

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

V(BR)DSS

500

—

Vdc

Zero Gate Voltage Drain Current

(VDS = Rated VDSS, VGS = 0 Vdc)

(VDS = 0.8 Rated VDSS, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

0.2

1.0

mAdc

Gate−Body Leakage Current, Forward

(VGSF = 20 Vdc, VDS = 0)

IGSS(f)

—

100

nAdc

Gate−Body Leakage Current, Reverse

(VGSR = 20 Vdc, VDS = 0)

IGSS(r)

—

100

nAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mA)

VGS(th)

2.0

4.0

Vdc

Static Drain−to−Source On−Resistance

(VGS = 10 Vdc, ID = 2.5 Adc)

RDS(on)

—

1.5

Ohm

On−State Drain Current (VGS = 10 V)

(VDS ≥ 6.75 Vdc)

ID(on)

4.5

—

Adc

Forward Transconductance

(VDS ≥ 6.75 Vdc, ID = 2.5 Adc)

gFS

2.5

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

800

Output Capacitance

Coss

—

200

Reverse Transfer Capacitance

Crss

—

SWITCHING CHARACTERISTICS (1)

Turn−On Delay Time

(VDD = 200 Vdc, ID = 2.5 Apk,

RG = 15 Ω)

td(on)

—

Rise Time

—

Turn−Off Delay Time

td(off)

—

Fall Time

—

Total Gate Charge

(VDS = 0.8 Rated VDSS,

VGS = 10 Vdc, ID = Rated ID)

22 (Typ)

Gate−Source Charge

Qgs

12 (Typ)

—

Gate−Drain Charge

Qgd

10 (Typ)

—

SOURCE−DRAIN DIODE CHARACTERISTICS (1)

Forward On−Voltage

(IS = Rated ID,

VGS = 0)

VSD

1.1 (Typ)

1.6

Vdc

Forward Turn−On Time

ton

Limited by stray inductance

Reverse Recovery Time

trr

450 (Typ)

—

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the contact screw on tab to center of die)

(Measured from the drain lead 0.25″ from package to center of die)

3.5 (Typ)

4.5 (Typ)

—

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

7.5 (Typ)

—

(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

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