NVMFS6B03NL

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2

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

100

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

67.3

mV/

°C

Zero Gate Voltage Drain Current

10

mA

100

Gate−to−Source Leakage Current

100

nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

1.0

3.0

V

Negative Threshold Temperature Coefficient

−8.1

mV/

°C

Drain−to−Source On Resistance

3.8

4.8

m

W

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

4200

pF

Output Capacitance

760

Reverse Transfer Capacitance

31

Total Gate Charge

58

nC

Threshold Gate Charge

6.2

Gate−to−Source Charge

19

Gate−to−Drain Charge

17

Plateau Voltage

5.4

V

Gate Resistance

1.0

W

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

16

ns

Rise Time

46

Turn−Off Delay Time

29

Fall Time

11

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.9

1.2

V

0.8

Reverse Recovery Time

67

ns

Charge Time

35

Discharge Time

31

Reverse Recovery Charge

120

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width

v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.