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NTMFS6B05N 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 NTMFS6B05N
상세설명  Single N-Channel Power MOSFET
PDF  6 Pages
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTMFS6B05N 데이터시트(HTML) 2 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
100
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
73
mV/
°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 80 V
TJ = 25 °C
10
mA
TJ = 125°C
100
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = 20 V
100
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
2.0
4.0
V
Threshold Temperature Coefficient
VGS(TH)/TJ
−7.9
mV/
°C
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V
ID = 20 A
6.5
8.0
m
W
VGS = 6.0 V
ID = 10 A
9.6
14
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
VGS = 0 V, f = 1 MHz, VDS = 50 V
3100
pF
Output Capacitance
COSS
570
Reverse Transfer Capacitance
CRSS
28
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 50 V; ID = 25 A
44
nC
Threshold Gate Charge
QG(TH)
5.0
Gate−to−Source Charge
QGS
14
Gate−to−Drain Charge
QGD
12
Plateau Voltage
VGP
5.0
V
Gate Resistance
RG
TJ = 25 °C
1.0
W
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
td(ON)
VGS = 10 V, VDS = 50 V,
ID = 25 A, RG = 1.0 W
14
ns
Rise Time
tr
43
Turn−Off Delay Time
td(OFF)
39
Fall Time
tf
16
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 25 A
TJ = 25°C
0.9
1.2
V
TJ = 125°C
0.8
Reverse Recovery Time
tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 25 A
58
ns
Charge Time
ta
30
Discharge Time
tb
28
Reverse Recovery Charge
QRR
83
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width
v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.



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