LM359MSLASHNOPB datasheet(2/34 Pages) TI1

2 / 34 page

(1)

Mirror gain is the current gain of the current mirror which is used as the non-inverting input.

ΔMirror Gain is the % change in

LM359

SNOSBT4C – MAY 1999 – REVISED MARCH 2013

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

Supply Voltage

22 VDC or ±11 VDC

D Package

Power Dissipation(3)

NFF Package

750 mW

D Package

+150°C

Maximum TJ

NFF Package

+125°C

147°C/W still air

D Package

θjA

110°C/W with 400

linear feet/min air flow

Thermal Resistance

100°C/W still air

NFF Package

θjA

75°C/W with 400

linear feet/min air flow

Input Currents, IIN(+) or IIN(−)

10 mADC

Set Currents, ISET(IN) or ISET(OUT)

2 mADC

Operating Temperature Range

0°C to +70°C

Storage Temperature Range

−65°C to +150°C

Lead Temperature

(Soldering, 10 sec.)

260°C

PDIP Package

Soldering (10 sec.)

260°C

Soldering Information

Vapor Phase (60 sec.)

215°C

SOIC Package

Infrared (15 sec.)

220°C

(1)

“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is functional, but do not ensure specific performance limits.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(3)

See Figure 22.

Electrical Characteristics

ISET(IN) = ISET(OUT) = 0.5 mA, Vsupply = 12V, TA = 25°C unless otherwise noted

Parameter

Conditions

Min

Typ

Max

Units

Open Loop Voltage

Vsupply = 12V, RL = 1k, f = 100 Hz

Gain

TA = 125°C

Bandwidth Unity Gain

RIN = 1 kΩ, Ccomp = 10 pF

MHz

Gain Bandwidth Product,

RIN = 50Ω to 200Ω

200

400

MHz

Gain of 10 to 100

Unity Gain

RIN = 1 kΩ, Ccomp = 10 pF

Slew Rate

μs

Gain of 10 to 100

RIN < 200Ω

Amplifier to Amplifier

f = 100 Hz to 100 kHz, RL = 1k

−80

Coupling

at 2 mA IIN(+), ISET = 5 μA, TA = 25°C

0.9

1.0

1.1

μA/μA

Mirror Gain(1)

at 0.2 mA IIN(+), ISET = 5 μA Over Temp.

0.9

1.0

1.1

μA/μA

at 20

μA IIN(+), ISET = 5 μA Over Temp.

0.9

1.0

1.1

μA/μA

ΔMirror Gain(1)

at 20

μA to 0.2 mA IIN(+) Over Temp, ISET = 5 μA

Inverting Input, TA = 25°C

μA

Input Bias Current

Over Temp.

μA

Input Resistance (

βre)

Inverting Input

2.5

Output Resistance

IOUT = 15 mA rms, f = 1 MHz

3.5

AI for two different mirror currents at any given temperature.

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