TS321

SLOS489C – DECEMBER 2005 – REVISED APRIL 2015

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7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Single Supply

32

Supply voltage

V

Dual Supplies

±16

±32

V

–0.3

32

V

Input current

50

mA

Duration of output short circuit to ground

Unlimited

Operating virtual junction temperature

150

°C

Storage temperature

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Differential voltages are at IN+ with respect to IN–.

(3)

7.2 ESD Ratings

VALUE

UNIT

±2500

Electrostatic discharge

V

Charged-device model (CDM), per JEDEC specification JESD22-

±1500

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

MIN

MAX

UNIT

Single supply

3

30

Supply voltage

V

Dual supply

±1.5

±15

Operating free-air temperature

–40

125

°C

7.4 Thermal Information

TS321

D (SOIC)

DBV (SOT-23)

UNIT

5 PIN

5 PIN

97

206

°C/W

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

(2)

Maximum power dissipation is a function of TJ(max), qJA, and TA. The maximum allowable power dissipation at any allowable ambient

temperature is PD = (TJ(max) – TA)/qJA. Selecting the maximum of 150°C can affect reliability.

(3)

The package thermal impedance is calculated in accordance with JESD 51-7.

4

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