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DMNH3010LK3 데이터시트(PDF) 4 Page - Diodes Incorporated |
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DMNH3010LK3 데이터시트(HTML) 4 Page - Diodes Incorporated |
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4 / 7 page ![]() DMNH3010LK3 Document number: DS38455 Rev. 2 - 2 4 of 7 www.diodes.com January 2016 © Diodes Incorporated DMNH3010LK3 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 -50 -25 0 25 50 75 100 125 150 175 T J, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature V GS = 4.5V, ID = 16A V GS = 10V, ID = 18A 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 175 T J, JUNCTION TEMPERATURE (℃) Figure 8 . Gate Threshold Variation vs. Junction Temperature I D = 250μA I D = 1mA 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current V GS = 0V T A = -55 oC T A = 25 oC T A = 85 oC T A = 175 oC T A = 150 oC T A = 125 oC 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 Qg (nC) Figure 10. Gate Charge V DS = 15V, ID = 18A 10 100 1000 10000 0 5 10 15 20 25 30 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 11. Typical Junction Capacitance f=1MHz Ciss Coss Crss 0.1 1 10 100 1000 0.1 1 10 100 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area T J(Max)=175℃ T C=25℃ Single Pulse DUT on infinite heatsink V GS=10V R DS(ON) Limited P W=1s P W=100ms P W=10ms P W=1ms P W=100μs P W=10μs |
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