1N5817 datasheet(4/7 Pages) STMICROELECTRONICS

4 / 7 page

Characteristics

1N5817, 1N5818, 1N5819

4/7

Doc ID 6262 Rev 5

Figure 7.

Non repetitive surge peak forward

current versus overload duration

(maximum values) (1N5817/1N5818)

Figure 8.

Non repetitive surge peak forward

current versus overload duration

(maximum values) (1N5819)

1E-3

1E-2

1E-1

1E+0

IM(A)

t(s)

Ta=100°C

Ta=75°C

Ta=25°C

d=0.5

1E-3

1E-2

1E-1

1E+0

IM(A)

t(s)

Ta=100°C

Ta=75°C

Ta=25°C

d=0.5

Figure 9.

Relative variation of thermal

impedance junction to ambient

versus pulse duration

Figure 10.

Junction capacitance versus

reverse voltage applied

(typical values)

1E-1

1E+0

1E+1

1E+2

1E+3

0.0

0.2

0.4

0.6

0.8

1.0

Zth(j-a)/Rth(j-a)

δ=tp/T

tp(s)

δ = 0.1

δ = 0.2

δ = 0.5

Single pulse

(epoxy printed circuit board,

e(Cu) = 35 mm, recommended pad layout)

102040

100

200

500

C(pF)

VR(V)

1N5819

1N5817

1N5818

F=1MHz

Tj=25°C

Figure 11.

Reverse leakage current versus

reverse voltage applied (typical

values) (1N5817/1N5818)

Figure 12.

Reverse leakage current versus

reverse voltage applied (typical

values) (1N5819)

1E-3

1E-2

1E-1

1E+0

1E+1

IR(mA)

1N5817

1N5818

VR(V)

Tj=100°C

Tj=25°C

Tj=125°C

1E-3

1E-2

1E-1

1E+0

1E+1

IR(mA)

VR(V)

Tj=100°C

Tj=25°C

Tj=125°C

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