SBR is a registered trademark of Diodes Incorporated

AL5802LP-7

Document number: DS37549 Rev. 3 - 2

3 of 10

www.diodes.com

May 2015

© Diodes Incorporated

AL5802LP-7

Package Thermal Data

Characteristic

Symbol

Value

Unit

0.50

W

250

°C/W

Recommended Operating Conditions

Symbol

Parameter

Min

Max

Unit

Supply Voltage Range

4.5

30

V

OUT Voltage Range

0.8

30

LED Pin Current (Note 5)

10

120

mA

Operating Ambient Temperature Range

-40

+125

°C

Electrical Characteristics

Symbol

Characteristic

Test Condition

Min

Typ

Max

Unit

Collector-Emitter Breakdown Voltage (Notes 6 & 7)

40

—

—

V

Emitter-Base Breakdown Voltage

6.0

—

—

V

Collector Cut-Off Current (Note 7)

—

—

50

nA

Base Cut-Off Current (Note 7 )

—

—

50

nA

DC Current Gain

40

70

100

—

—

—

—

—

300

—

Collector-Emitter Saturation Voltage (Note 6)

—

—

0.20

V

Base-Emitter Saturation Voltage

0.65

—

0.85

V

Base-Emitter Turn-On Voltage

0.30

1.10

V

Electrical Characteristics

Symbol

Characteristic

Test Condition

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

30

—

—

V

Collector-Emitter Breakdown Voltage (Note 6)

30

—

—

V

Emitter-Base Breakdown Voltage (Note 7)

5.0

—

—

V

Collector Cut-Off Current

—

—

0.5

µA

Emitter Cut-Off Current (Note 7)

—

—

0.5

µA

Collector-Emitter Saturation Voltage (Note 6)

—

—

0.3

V

Base-Emitter Turn-On Voltage

0.30

1.10

V

DC Current Gain (Note 6)

100

—

—

—

Input Resistance

—

7

10

13

kΩ

Note:

4. Device mounted on FR-4 PCB, single-sided, 2oz copper trace weight with minimum recommended pad layout.

5. Subject to ambient temperature, power dissipation and PCB substrate material selection.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design and tested only at the wafer level for single die. These parameters cannot be tested at the finished goods level due to

the testability of the device changed after packaging multiple dies to form an application circuit.