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BC807 데이터시트(PDF) 2 Page - Infineon Technologies AG

부품명 BC807
상세설명  PNP Silicon AF Transistors
PDF  5 Pages
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제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BC807 데이터시트(HTML) 2 Page - Infineon Technologies AG

  BC807 Datasheet HTML 1Page - Infineon Technologies AG BC807 Datasheet HTML 2Page - Infineon Technologies AG BC807 Datasheet HTML 3Page - Infineon Technologies AG BC807 Datasheet HTML 4Page - Infineon Technologies AG BC807 Datasheet HTML 5Page - Infineon Technologies AG  
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BC807, BC808
2
Nov-29-2001
Electrical Characteristics
at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BC807
BC808
V(BR)CEO
45
25
-
-
-
-
V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
BC807
BC808
V(BR)CBO
50
30
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO
5
-
-
Collector cutoff current
VCB = 25 V, IE = 0
ICBO
-
-
100
nA
Collector cutoff current
VCB = 25 V, IE = 0 , TA = 150 °C
ICBO
-
-
50
µA
Emitter cutoff current
VEB = 4 V, IC = 0
IEBO
-
-
100
nA
DC current gain 1)
IC = 100 mA, VCE = 1 V
hFE-grp. 16
hFE-grp. 25
hFE-grp. 40
hFE
100
160
250
160
250
350
250
400
630
-
DC current gain 1)
IC = 500 mA, VCE = 1 V
hFE
40
-
-
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
VCEsat
-
-
0.7
V
Base-emitter saturation voltage 1)
IC = 500 mA, IB = 50 mA
VBEsat
-
-
1.2
1) Pulse test: t
≤ 300µs, D = 2%



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