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BCP29 데이터시트(PDF) 1 Page - Infineon Technologies AG |
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BCP29 데이터시트(HTML) 1 Page - Infineon Technologies AG |
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1 / 5 page ![]() BCP29, BCP49 1 Nov-29-2001 NPN Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: BCP28/48 (PNP) VPS05163 1 2 3 4 EHA00009 B(1) E(3) C(2,4) Type Marking Pin Configuration Package BCP29 BCP49 BCP 29 BCP 49 1 = B 1 = B 2 = C 2 = C 3 = E 3 = E 4 = C 4 = C SOT223 SOT223 Maximum Ratings Parameter Symbol BCP29 BCP49 Unit Collector-emitter voltage VCEO 30 60 V Collector-base voltage VCBO 40 80 Emitter-base voltage VEBO 10 10 IC 500 DC collector current mA Peak collector current mA ICM 800 Base current 100 IB 200 IBM Peak base current Total power dissipation, TS = 124 °C Ptot W 1.5 150 °C Junction temperature Tj Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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