BCX69 datasheet(2/4 Pages) INFINEON

부품명	BCX69

상세설명	PNP Silicon AF Transistors

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BCX69

2

Jul-23-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

Characteristics

Collector-emitter breakdown voltage

IC = 30 mA, IB = 0

V(BR)CEO

20

-

V

Collector-base breakdown voltage

IC = 10 µA, IB = 0

V(BR)CBO

25

-

Emitter-base breakdown voltage

IE = 1 µA, IC = 0

V(BR)EBO

5

-

Collector cutoff current

VCB = 25 V, IE = 0

ICBO

-

100

nA

Collector cutoff current

VCB = 25 V, IE = 0 , TA = 150 °C

ICBO

-

100

µA

DC current gain 1)

IC = 5 mA, VCE = 10 V

hFE

50

-

DC current gain 1)

IC = 500 mA, VCE = 1 V

BCX69

BCX69-10

BCX69-16

BCX69-25

hFE

85

100

160

-

100

160

250

375

160

250

375

DC current gain 1)

IC = 1 A, VCE = 1 V

hFE

60

-

Collector-emitter saturation voltage1)

IC = 1 A, IB = 100 mA

VCEsat

-

0.5

V

Base-emitter voltage 1)

IC = 5 mA, VCE = 10 V

IC = 1 A, VCE = 1 V

VBE(ON)

-

0.6

-

1

AC Characteristics

Transition frequency

IC = 100 mA, VCE = 5 V, f = 20 MHz

fT

-

100

-

MHz

1) Pulse test: t

≤=300µs, D = 2%

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