BFP136 datasheet(1/7 Pages) INFINEON

부품명	BFP136

상세설명	NPN Silicon RF Transistor

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제조업체	INFINEON [Infineon Technologies AG]

홈페이지	http://www.infineon.com

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BFP136W

Jun-22-2001

1

NPN Silicon RF Transistor

For power amplifier in DECT and PCN systems

fT = 5.5GHz

Gold metalization for high reliability

VPS05605

4

2

1

3

ESD

: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFP136W

PAs

1 = E

2 = C

3 = E

4 = B

SOT343

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCEO

12

V

Collector-emitter voltage

VCES

20

Collector-base voltage

VCBO

20

Emitter-base voltage

VEBO

2

Collector current

IC

150

mA

Base current

IB

20

Total power dissipation

TS

60°C 1)

Ptot

1000

mW

Junction temperature

Tj

150

°C

Ambient temperature

TA

-65 ... 150

Storage temperature

Tstg

-65 ... 150

Thermal Resistance

Junction - soldering point 2)

RthJS

90

K/W

1TS is measured on the collector lead at the soldering point to the pcb

2For calculation of RthJA please refer to Application Note Thermal Resistance

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