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BFP620 데이터시트(PDF) 3 Page - Infineon Technologies AG

부품명 BFP620
상세설명  NPN Silicon Germanium RF Transistor
PDF  7 Pages
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제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP620 데이터시트(HTML) 3 Page - Infineon Technologies AG

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BFP620
Apr-21-2004
3
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 50 mA, VCE = 1.5 V, f = 1 GHz
fT
-
65
-
GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz
Ccb
-
0.12
0.2
pF
Collector emitter capacitance
VCE = 2 V, f = 1 MHz
Cce
-
0.22
-
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
-
0.46
-
Noise figure
IC = 5 mA, VCE = 1.5 V, f = 1.8 GHz, ZS = ZSopt
IC = 5 mA, VCE = 1.5 V, f = 6 GHz, ZS = ZSopt
F
-
-
0.7
1.3
-
-
dB
Power gain, maximum stable1)
IC = 50 mA, VCE = 1.5 V, ZS = ZSopt,
ZL = ZLopt , f = 1.8 GHz
Gms
-
21.5
-
dB
Power gain, maximum available1)
IC = 50 mA, VCE = 1.5 V, ZS = ZSopt,
ZL = ZLopt, f = 6 GHz
Gma
-
11
-
dB
Transducer gain
IC = 50 mA, VCE = 1.5 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
IC = 50 mA, VCE = 1.5 V, ZS = ZL = 50 Ω,
f = 6 GHz
|S21e|2
-
-
20
9.5
-
-
dB
Third order intercept point at output2)
VCE = 2 V, IC = 50 mA, f = 1.8 GHz,
ZS = ZL = 50 Ω
IP3
-
25
-
dBm
1dB Compression point at output
IC = 50 mA, VCE = 2 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
P-1dB
-
15
-
1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
Ω from 0.1 MHz to 6 GHz



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