BFP640

Apr-21-2004

1

NPN Silicon Germanium RF Transistor

• High gain low noise RF transistor

• Provides outstanding performance

for a wide range of wireless applications

• Ideal for CDMA and WLAN applications

• Outstanding noise figure F = 0.65 dB at 1.8 GHz

Outstanding noise figure F = 1.3 dB at 6 GHz

• High maximum stable gain

• Gold metallization for extra high reliability

VPS05605

4

2

1

3

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFP640

R4s

1=B

2=E

3=C

4=E

-

-

SOT343

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

4

3.7

V

Collector-emitter voltage

13

Collector-base voltage

13

Emitter-base voltage

1.2

Collector current

50

mA

Base current

3

200

mW

Junction temperature

150

°C

Ambient temperature

-65 ... 150

Storage temperature

-65 ... 150

1TS is measured on the collector lead at the soldering point to the pcb