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DF2B6M4SL 데이터시트(PDF) 2 Page - Toshiba Semiconductor

부품명 DF2B6M4SL
상세설명  This product is designed for protection against electrostatic discharge and is not intended for any other purpose, including, but not limited to, voltage regulation.
PDF  8 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

DF2B6M4SL 데이터시트(HTML) 2 Page - Toshiba Semiconductor

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DF2B6M4SL
2015-09-29
2
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse stand-off voltage
VRWM
―
―
―
5.5
V
Reverse breakdown voltage
VBR
IBR = 1 mA
5.6
6.2
8
V
Reverse current
IR
VRWM = 5.5 V
―
―
0.1
A
Clamping Voltage
Vc
IPP=1A (Note1)
―
8.5
―
V
Vc
IPP=2A (Note1)
―
10
15
V
Clamping Voltage
Vc
ITLP=16A (Note2)
―
18
―
V
Vc
ITLP=30A (Note2)
―
25
―
V
Dynamic resistance
RDYN
(Note2)
―
0.5
―
Ω
Total capacitance
Ct
VR  0 V, f  1 MHz (Note3)
―
0.2
0.3
pF
Note1:Based on IEC61000-4-5 8/20μs pulse.
Note2:TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 300ps, averaging window: t1 = 30 ns to t2 = 60 ns,
extraction of dynamic resistance using least squares fit of TLP characteristics between IPP1 = 8A and IPP2 = 16A.
Note3:Guaranteed by design.
Equivalent Circuit (Top View)
Marking
Land Pattern Dimensions for Reference Only(Unit:mm)
Pin1 Mark
1
2



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