| 전자부품 데이터시트 검색엔진 |
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BSP76 데이터시트(PDF) 4 Page - Infineon Technologies AG |
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BSP76 데이터시트(HTML) 4 Page - Infineon Technologies AG |
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4 / 10 page ![]() 2004-03-05 Page 4 BSP 76 Electrical Characteristics Parameter Symbol Values Unit at Tj = 25°C, unless otherwise specified min. typ. max. Dynamic Characteristics Turn-on time VIN to 90% ID: RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V ton - 45 100 µs Turn-off time VIN to 10% ID: RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V toff - 60 100 Slew rate on 70 to 50% Vbb: RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V -dVDS/dton - 0.4 1.5 V/µs Slew rate off 50 to 70% Vbb: RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V dVDS/dtoff - 0.6 1.5 Protection Functions1) Thermal overload trip temperature Tjt 150 175 - °C Thermal hysteresis 2) DTjt - 10 - K Input current protection mode Tj = 150 °C IIN(Prot) - 40 300 µA Unclamped single pulse inductive energy 2) ID = 1.4 A, Tj = 25 °C, Vbb = 12 V EAS 150 - - mJ Inverse Diode Inverse diode forward voltage IF = 7 A, tm = 250 µs, VIN = 0 V, tP = 300 µs VSD - 1 1.5 V 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2not subject to production test, specified by design |
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