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RT2904WH 데이터시트(PDF) 6 Page - STMicroelectronics

부품명 RT2904WH
상세설명  RobuST low-power dual operational amplifier
PDF  13 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

RT2904WH 데이터시트(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
RT2904WH
6/13
DocID026931 Rev 1
SR
Slew rate (unity gain)
VCC+ = 15 V, Vi = 0.5 to 3 V, RL = 2 kΩ, CL = 100 pF,
Tmin ≤ Tamb ≤ Tmax
0.3
0.2
0.6
V/µs
GBP
Gain bandwidth product f = 100 kHz
VCC+ = 30 V, Vin = 10 mV, RL = 2 kΩ, CL = 100 pF
Tmin ≤ Tamb ≤ Tmax
0.7
0.45
1.1
MHz
THD
Total harmonic distortion
f = 1 kHz, AV = 20 dB, RL = 2 kΩ, Vo = 2 Vpp,
CL = 100 pF, VCC = 30 V
0.02
%
en
Equivalent input noise voltage, f = 1 kHz, RS = 100 Ω,
VCC = 30 V
55
nV/
Hz
DVio
Input offset voltage drift
7
30
µV/°C
DIio
Input offset current drift
10
300
pA/°C
VO1/VO2
Channel separation(3)
1 kHz
≤ f ≤ 20 kHz
120
dB
1.
VO = 1.4 V, RS = 0 Ω, 5 V < VCC+ < 30 V, 0 V < Vic < (VCC+) - 1.5 V.
2. The direction of the input current is out of the IC. This current is essentially constant, independent of the state of the output,
so there is no change in the loading charge on the input lines.
3. Due to the proximity of external components, ensure that stray capacitance does not cause coupling between these
external parts. Typically, this can be detected because this type of capacitance increases at higher frequencies.
Table 3. VCC+ = 5V, VCC- = ground, Vo = 1.4 V, Tamb = 25 °C
(unless otherwise specified) (continued)
Symbol
Parameter
Min.
Typ.
Max.
Unit



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