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RPC564L60L5BFSR 데이터시트(PDF) 110 Page - STMicroelectronics |
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RPC564L60L5BFSR 데이터시트(HTML) 110 Page - STMicroelectronics |
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110 / 137 page ![]() Electrical characteristics RPC56EL60L5 110/137 DocID026934 Rev 1 3.17 SWG electrical characteristics 3 Retentio n C Minimum data retention at 85 °C average ambient temperature(3) Blocks with 0–1,000 P/E cycles Blocks with 1,001–10,000 P/E cycles Blocks with 10,001–100,000 P/E cycles 20 10 5 — — — — — — year s 1. Operating temperature range is TJ from –40 °C to 150 °C. Typical endurance is evaluated at 25 C. 2. Typical P/E cycles is 100,000 cycles for 128 KB and 256 KB blocks. 3. Ambient temperature averaged over duration of application, not to exceed product operating temperature range. Table 27. Flash memory module life (continued) No . Symbol Parameter Value Unit Minimu m Typical Maximu m Table 28. RPC56EL60L5 SWG Specifications Symbol Parameter Value Minimum Typical Maximum T Input clock 12 MHz 16 MHz 20 MHz T Frequency Range 1kHz — 50 kHz T Peak to Peak(1) 0.4 V — 2.0V T Peak to Peak variation(2) -6% — 6% T Common Mode(3) — 1.3 V — T Common Mode variation -6% — 6% T SiNAD(4) 45 dB — — T Load C 25 pF — 100 pF T Load I 0 A — 100 A T ESD Pad Resistance(5) 230 — 360 1. Peak to Peak value is measured with no R or I load. 2. Peak to Peak excludes noise, SiNAD must be considered. 3. Common mode value is measured with no R or I load. 4. SiNAD is measured at Max Peak to Peak voltage. 5. Internal device routing resistance. ESD pad resistance is in series and must be considered for max Peak to Peak voltages, depending on application I load and/or R load. |
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