STB18N60DM2 datasheet(1/15 Pages) STMICROELECTRONICS

부품명	STB18N60DM2

상세설명	Fast-recovery body diode

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제조업체	STMICROELECTRONICS [STMicroelectronics]

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January 2016

DocID027677 Rev 3

1/15

This is information on a product in full production.

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STB18N60DM2

N-

channel 600 V, 0.260 Ω typ., 12 A MDMesh™ DM2

Power MOSFET in a D²PAK package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on) max.

ID

STB18N60DM2

600 V

0.295 Ω

12 A



Fast-recovery body diode



Extremely low gate charge and input

capacitance



Low on-resistance



100% avalanche tested



Extremely high dv/dt ruggedness



Zener-protected

Applications



Switching applications

Description

This high voltage N-channel Power MOSFET is

part of the MDmesh™ DM2 fast recovery diode

series. It offers very low recovery charge (Qrr)

and time (trr) combined with low RDS(on), rendering

it suitable for the most demanding high efficiency

converters and ideal for bridge topologies and

ZVS phase-shift converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STB18N60DM2

18N60DM2

D²PAK

Tape and Reel

1

3

TAB

D²PAK

2

AM15572v1_tab

D(2, TAB)

G(1)

S(3)

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