37N60DM2 datasheet(1/15 Pages) STMICROELECTRONICS

부품명	37N60DM2

상세설명	Extremely low gate charge and input capacitance

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제조업체	STMICROELECTRONICS [STMicroelectronics]

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August 2015

DocID028271 Rev 1

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This is information on a product in full production.

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STB37N60DM2AG

Automotive-grade N-

channel 600 V, 0.094 Ω typ., 28 A

MDmesh™ DM2 Power MOSFET in a D²PAK package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on) max.

ID

PTOT

STB37N60DM2AG

600 V

0.110

Ω

28 A

210 W



Designed for automotive applications and

AEC-Q101 qualified



Fast-recovery body diode



Extremely low gate charge and input

capacitance



Low on-resistance



100% avalanche tested



Extremely high dv/dt ruggedness



Zener-protected

Applications



Switching applications

Description

This high voltage N-channel Power MOSFET is

part of the MDmesh™ DM2 fast recovery diode

series. It offers very low recovery charge (Qrr)

and time (trr) combined with low RDS(on), rendering

it suitable for the most demanding high efficiency

converters and ideal for bridge topologies and

ZVS phase-shift converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STB37N60DM2AG

37N60DM2

D²PAK

Tape and reel

1

3

TAB

D2PAK

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37N60DM2 데이터시트(PDF) 1 Page - STMicroelectronics

37N60DM2 데이터시트(HTML) 1 Page - STMicroelectronics

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