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STL92N10F7AG 데이터시트(PDF) 1 Page - STMicroelectronics |
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STL92N10F7AG 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 16 page ![]() This is information on a product in full production. October 2015 DocID027022 Rev 2 1/16 STL92N10F7AG Automotive-grade N-channel 100 V, 0.008 Ω typ.,16 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1. Internal schematic diagram Features • Designed for automotive applications and AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness • Wettable flank package Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. PowerFLAT ™5x6 1 2 3 4 AM15540v2 5 6 7 8 12 3 4 Top View D(5, 6, 7, 8) G(4) S(1, 2, 3) Order code VDS RDS(on) max ID PTOT STL92N10F7AG 100 V 0.0095 Ω 16 A 5 W Table 1. Device summary Order code Marking Package Packaging STL92N10F7AG 92N10F7 PowerFLATTM 5x6 Tape and reel www.st.com |
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