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STB30NF20L 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STB30NF20L
상세설명  Very good manufacturing repeatability
PDF  14 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STB30NF20L 데이터시트(HTML) 5 Page - STMicroelectronics

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STB30NF20L
Electrical characteristics
Doc ID 022753 Rev 2
5/14
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
VSD=1.5 V
-
30
120
A
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD=30 A, VGS=0
-1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=30 A, di/dt = 100 A/µs,
VDD=100 V
-
140
750
13
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=30 A, di/dt = 100 A/µs,
VDD=100 V, Tj=150 °C
-
170
1.1
14
ns
µC
A



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