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STL66N3LLH5 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STL66N3LLH5
상세설명  Automotive-grade dual N-channel 30 V, 4.5 mΩ typ., 80 A STripFET™ H5 Power MOSFET in a PowerFLAT™ 5x6 package
PDF  15 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL66N3LLH5 데이터시트(HTML) 5 Page - STMicroelectronics

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STL66N3LLH5
Electrical characteristics
DocID022356 Rev 3
5/15
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
21
A
ISDM(1)
Source-drain current
(pulsed)
-
84
A
VSD(2)
Forward on voltage
VGS = 0 V, ISD = 19 A
-
1.1
V
trr
Reverse recovery time
ISD = 19 A, di/dt = 100 A/µs,
VDD = 25 V, Tj = 150 °C (see
Figure 15: "Test circuit for
inductive load switching and
diode recovery times")
-
25
ns
Qrr
Reverse recovery charge
-
17.5
nC
IRRM
Reverse recovery current
-
1.4
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.



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